2013年4月10日 星期三
TLP628 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide
infrared emitting diode optically coupled to a phototransistor which has
a 350V high voltage of collector−emitter breakdown voltage.
The TLP628−2 offers two isolated channels in a eight lead plastic
DIP package, while the TLP628−4 provide four isolated channels per
package.
• Collector−emitter voltage: 350 V (min.)
• Current transfer ratio: 50% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
DataSheet
Motorola 2N2222 / 2N2222A Amplifier Transistors
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.
On special request, these transistors can be manufactured in different pin configurations.
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